BCR12PM-12 डाटा शीट PDF( Datasheet )

TM HPM HAOPIN MICROELECTRONICS CO.,LTD. BCR12PM Three quadrant triacs Description Passivated high commutation triacs in a plastic envelope intended for use in circuits where high static and dynamic dV/dt and

isc Thyristors INCHANGE Semiconductor BCR12PM-12LA DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance a

BCR12PM-12LA Triac Medium Power Use Preliminary Datasheet R07DS0107EJ0300 (Previous: REJ03G0305-0200) Rev.3.00 Sep 13, 2010 Features  IT (RMS) : 12 A  VDRM : 600 V  IFGTI, IRGTI, IRGT III : 30 mA (20

Preliminary Datasheet BCR12PM-12LB Triac R07DS0108EJ0300 Medium Power Use (Previous: REJ03G0463-0200) Rev.3.00 (The product guaranteed maximum junction temperature of 150C) Sep 13, 2010 Features �

BCR12PM-12LC Triac Medium Power Use Features • IT (RMS) : 12 A • VDRM : 600 V • IFGTI, IRGTI, IRGTIII : 50 mA • Viso : 1500 V Outline RENESAS Package code: PRSS0003AA-B (Package name: TO-220F(2) ) REJ0

BCR12PM-12LG Triac Medium Power Use Features  IT (RMS) : 12 A  VDRM : 600 V  IFGTI, IRGTI, IRGT III : 30 mA  Viso : 2000V Outline RENESAS Package code: PRSS0003AA-A (Package name: TO-220F) Prelimin

isc Thyristors INCHANGE Semiconductor BCR12PM-12LG DESCRIPTION ·With TO-220F packaging ·Operating in 3 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance a