BC857S डाटा शीट PDF( Datasheet )

Production specification Dual PNP Small Signal Surface Mount Transistor FEATURES  Epitaxial planar die construction.  Complementary NPN type available BC847S.  Ultra-small surface mount package. Pb

PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated transistor with good matc

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD JC(T SOT-363 Plastic-Encapsulate Transistors BC857S DUAL TRANSISTOR (PNP+PNP) FEATURES z Two transistors in one package z Reduces number of components and b

BC857S Dual PNP Transistor Features ■ Dual PNP transistors in one single package ■ No mutual interference between the transistors Absolute Maximum Ratings (TA = 25 °C unless otherwise noted) Parameter

BC857S — PNP, Multi-Chip, General-Purpose Amplifier August 2015 BC857S PNP, Multi-Chip, General-Purpose Amplifier Description This device is designed for general-purpose amplifier applications at collector

MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BC857S Features x Multi-chip Transistor x Ultra-Small

Elektronische Bauelemente BC857S PNP Silicon Multi-Chip Transistor RoHS Compliant Product * Features Power dissipation PCM : 0.3 W (Tamp.= 25OC) Collector current ICM : -0.2 A Collector-base voltage V(BR)CBO