BC847S डाटा शीट PDF( Datasheet )

Production specification Dual NPN Small Signal Surface Mount Transistor FEATURES  Epitaxial planar die construction.  Ultra-small surface mount package. Pb Lead-free BC847S APPLICATIONS  Dual NPN

BC846S, BC847S BC846S, BC847S SMD General Purpose NPN Transistors SMD Universal-NPN-Transistoren IC = 100 mA hFE = 200...450 Tjmax = 150°C VCEO = 45 V, 65 V Ptot = 250 mW Version 2018-02-07 SOT-363 2±0.

NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated transistors with good mat

BC847S BC847S E2 B2 C1 SC70-6 Mark: 1C pin #1 C2 B1 E1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the f

JC(T JIANGS U CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S DUAL TRANSISTOR (NPN+NPN) APPLICATION This device is designed for general purpose amplifier application

RoHS BC847S Multi-Chip TRANSISTOR (NPN) SOT-363 FEATURES Power dissipation DPCM : 300 mW (Tamb=25℃) TCollector current .,LICM : 200 mA Collector-base voltage V(BR)CBO : 50 V Operating and storage ju

SMD Type Transistors NPN Multi-Chip General Purpose Amplifier KC847S(BC847S) Features High current gain Low collector-emitter saturation voltage SOT-363 1.3+0.1 -0.1 0.65 Unit: mm 0.525 +0.11.25 -0.1 +0