BC846S डाटा शीट PDF( Datasheet )

BC846S, BC847S BC846S, BC847S SMD General Purpose NPN Transistors SMD Universal-NPN-Transistoren IC = 100 mA hFE = 200...450 Tjmax = 150°C VCEO = 45 V, 65 V Ptot = 250 mW Version 2018-02-07 SOT-363 2±0.

BC 846S NPN Silicon AF Transistor Array • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two ( galvanic) internal isolated Transistors with

NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated transistors with good mat

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD JC(T SOT-363 Plastic-Encapsulate Transistors BC846S DUAL TRANSISTOR (NPN+NPN) FEATURES z Two transistors in one package z Reduces number of components and bo

MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Lead Free Finish/RoHS Compliant ("P" Suffix

Elektronische Bauelemente BC846S Plastic-Encapsulate Multi-Chip (NPN+NPN) Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Two transistors in one package 

www.DataSheet4U.com SMD Type NPN Silicon AF Transistors Array KC846S(BC846S) Transistors SOT-363 1.3 +0.1 -0.1 Unit: mm 0.65 0.525 For AF input stage and driver applications High current gain. Low collect