BC338 डाटा शीट PDF( Datasheet )

BC337 / BC338 — NPN Epitaxial Silicon Transistor September 2015 BC337 / BC338 NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver Stages and Low-Po

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC337/D Amplifier Transistors NPN Silicon COLLECTOR 1 BC337,-16,-25,-40 BC338,-16,-25,-40 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC3

BC337, BC338 Small Signal Transistors (NPN) TO-92 .181 (4.6) .142 (3.6) min..492 (12.5) .181 (4.6) max.∅ .022 (0.55) .098 (2.5) CE B Dimensions in inches and (millimeters) FEATURES ♦ NPN Silicon Epitax

NPN Silicon AF Transistors q High current gain q High collector current q Low collector-emitter saturation voltage q Complementary types: BC 327, BC 328 (PNP) BC 337 BC 338 2 3 1 Type BC 337 BC 337-16 BC 337-

BC337…BC338 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications These types are subdivided into three groups -16, -25 and -40, according to their DC current gain. Absolute Maximu

BC337 / BC338 BC337 / BC338 NPN General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz Version 2006-05-30 Power dissipation Verlustleistung CBE Plastic

NPN General Purpose Transistor P b Lead(Pb)-Free BC337/BC338 COLLECTOR 1 2 BASE 3 EMITTER TO-92 1 2 3 Maximum Ratings(TA=25°C unless otherwise noted) Rating Symbol BC337 BC338 Collector-Base voltage