BC337 डाटा शीट PDF( Datasheet )

isc Silicon NPN Transistor DESCRIPTION ·Low Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For AF-Driver stages and low power output stages. ABSO

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC337/D Amplifier Transistors NPN Silicon COLLECTOR 1 BC337,-16,-25,-40 BC338,-16,-25,-40 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC3

BC337, BC337-25, BC337-40 Amplifier Transistors NPN Silicon Features • These are Pb−Free Devices MAXIMUM RATINGS Rating Collector − Emitter Voltage Collector − Base Voltage Emitter − Base Voltage Co

BC817; BC817W; BC337 45 V, 500 mA NPN general-purpose transistors Rev. 06 — 17 November 2009 Product data sheet 1. Product profile 1.1 General description NPN general-purpose transistors. Table 1. Produ

BC337 / BC338 — NPN Epitaxial Silicon Transistor September 2015 BC337 / BC338 NPN Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver Stages and Low-Po

Elektronische Bauelemente BC337 / BC338 NPN Plastic-Encapsulate Transistor FEATURE Power Dissipation CLASSIFICATION OF hFE Product-Rank BC337-16 Product-Rank BC338-16 Range 100~250 RoHS Compliant Produc

1. COLLECTOR 2. BASE 3. EMITTER BC337/338(NPN) TO-92 Bipolar Transistors TO-92 Features Power dissipation MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter VCBO Collector-Base Voltage B