B601 डाटा शीट PDF( Datasheet )

www.DataSheet4U.com DATA SHEET SILICON POWER TRANSISTOR 2SB601 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING FEATURES • High-DC curren

N-Channel 60-V (D-S) MOSFET B6010D General Description The B6010D is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high

N-Channel 60-V (D-S) MOSFET B6010K General Description The B6010K is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high

B6010S Single N-Channel 60-V (D-S) MOSFET General Description The B6010S is the Single N-Channel logic enhancement mode power field effect transistors to provide excellent RDS(on), low gate charge and low gate