डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
B1016A | 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type
2SB1016A
Power Amplifier Applications
2SB1016A
Unit: mm
• High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE (sat) = −2 |
Toshiba |
|
B1016 | 2SB1016 | ETC |
|
B1016A | 2SB1016A | Toshiba |
www.DataSheet.in | 2017 | संपर्क |