डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
B1016 | 2SB1016 2SB1016
PNP EPITAXIAL SILICON TRANSISTOR
POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT
www.DataSheet4U.com
SC-67
!
Complement to 2SD1407
ABSOLUTE MAXIMUM RATINGS (TA=25℃)
Characteristic Collector-Base Volt |
ETC |
|
B1016A | 2SB1016A TOSHIBA Transistor Silicon PNP Epitaxial Type
2SB1016A
Power Amplifier Applications
2SB1016A
Unit: mm
• High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE (sat) = −2 |
Toshiba |
www.DataSheet.in | 2017 | संपर्क |