डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
AS4LC1M16E5 | 3V 1M x 16 CMOS DRAM AS4LC1M16E5
®
3V 1M×16 CMOS DRAM (EDO)
Features
• Organization: 1,048,576 words × 16 bits • High speed
- 50/60 ns RAS access time - 20/25 ns hyper page cycle time - 12/15 ns CAS access time • Low po |
Alliance Semiconductor |
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AS4LC1M16E5 | 3V 1M x 16 CMOS DRAM | Alliance Semiconductor |
www.DataSheet.in | 2017 | संपर्क |