| No. | Partie # | Fabricant | Description | Fiche Technique |
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Alliance Semiconductor |
5V 1M x 16 CMOS DRAM • Organization: 1,048,576 words × 16 bits • High speed - 45/50/60 ns RAS access time - 20/20/25 ns fast page cycle time - 10/12/15 ns CAS access time • Low power consumption - Active: 880 mW max (AS4C1M16F5-60) - Standby: 11 mW max, CMOS DQ • Fast pa |
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