डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
APT5010B2 | Power MOSFET APT5010B2FLL APT5010LFLL
500V 46A 0.100W
POWER MOS 7TM
FREDFET
B2FLL
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching loss |
Advanced Power Technology |
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APT5010B2FLL | Power MOSFET APT5010B2FLL APT5010LFLL
500V 46A 0.100Ω
POWER MOS 7 R FREDFET
B2FLL
Power MOS 7® is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
l |
Advanced Power Technology |
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APT5010B2FLL | N-Channel MOSFET isc N-Channel MOSFET Transistor
APT5010B2FLL
FEATURES ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage-
: VDSS=500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =0.1Ω(Max) ·100% avalanche t |
INCHANGE |
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APT5010B2LC | high voltage N-Channel enhancement mode power MOSFET APT5010B2LC APT5010LLC
500V 47A 0.100W
POWER MOS VITM
B2LC
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is
T-MAX™
TO-264 |
Advanced Power Technology |
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APT5010B2LL | Power MOSFET 500V 46A 0.100W
APT5010B2LL APT5010LLL
B2LL
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addres |
Advanced Power Technology |
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APT5010B2LL | N-Channel MOSFET isc N-Channel MOSFET Transistor
APT5010B2LL
FEATURES ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage-
: VDSS=500V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =0.1Ω(Max) ·100% avalanche te |
INCHANGE |
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APT5010B2VFR | Power MOSFET APT5010B2VFR
500V 47A 0.100Ω
POWER MOS V ®
FREDFET
T-MAX™
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, incre |
Advanced Power Technology |
www.DataSheet.in | 2017 | संपर्क |