डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
APT10M19BVR | MOSFET APT10M19BVR
100V 75A 0.019Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density |
Advanced Power Technology |
|
APT10M19BVR | N-Channel MOSFET isc N-Channel MOSFET Transistor
APT10M19BVR
FEATURES ·Drain Current –ID=75A@ TC=25℃ ·Drain Source Voltage-
: VDSS=100V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =0.019Ω(Max) ·100% avalanche t |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |