डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
APT1002RBN | MOSFET D
TO-247
G S
APT1002RBN
®
1000V 7.0A 2.00Ω
POWER MOS IV
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage
APT1002R4BN 1000V 6.5A 2.40Ω
All Ratings: TC = 25°C unless |
Advanced Power Technology |
|
APT1002RBN | (APT Series) N-Channel Enhancement Mode High Voltage Power MOSFET www.DataSheet4U.com
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www.DataSheet.in | 2017 | संपर्क |