AOW2502 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOW2502 FEATURES ·Drain Current –ID= 106A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) =10.7mΩ(Max) ·100% avalanche te

AOW2502 150V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RD