AOW20S60 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOW20S60 FEATURES ·Drain Current –ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.199Ω(Max) ·100% avalanche tes

AOW20S60/AOWF20S60 600V 20A α MOS TM Power Transistor General Description The AOW20S60 & AOWF20S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels