AOW11N60 डाटा शीट PDF( Datasheet )

AOW11N60 600V,11A N-Channel MOSFET General Description The AOW11N60 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in po

isc N-Channel MOSFET Transistor AOW11N60 FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) ·100% avalanche tes