AOW10N60 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOW10N60 FEATURES ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) ·100% avalanche test

AOW10N60/AOWF10N60 600V,10A N-Channel MOSFET General Description The AOW10N60 & AOWF10N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performan