डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
AOU4N60 | N-Channel MOSFET isc N-Channel MOSFET Transistor
AOU4N60
FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =2.3Ω(Max) ·100% avalanche tested |
INCHANGE |
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AOU4N60 | 4A N-Channel MOSFET AOD4N60/AOI4N60/AOU4N60
600V,4A N-Channel MOSFET
General Description
Product Summary
The AOD4N60 & AOI4N60 & AOU4N60 have been fabricated using an advanced high voltage MOSFET process that is designed to del |
Alpha & Omega Semiconductors |
www.DataSheet.in | 2017 | संपर्क |