| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Alpha & Omega Semiconductors |
N-Channel MOSFET Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL S DG G Maximum 500 ±30 2.8 1.8 9 2 60 120 50 5 57 0.45 -50 to 150 300 S Therma |
|
|
|
|
INCHANGE |
N-Channel MOSFET ·Drain Current –ID= 2.8A@ TC=25℃ ·Drain Source Voltage- : VDSS=500V(Min) ·Static Drain-Source On-Resistance : RDS(on) =3.0Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION · |
|