AOTF7N65 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOTF7N65 FEATURES ·Drain Current –ID= 7.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) =1.56Ω(Max) ·100% avalanche tes

AOT7N65/AOTF7N65 650V, 7A N-Channel MOSFET General Description Product Summary The AOT7N65 & AOTF7N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high level