AOTF3N100 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOTF3N100 FEATURES ·Drain Current –ID= 2.8A@ TC=25℃ ·Drain Source Voltage- : VDSS= 1000V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6Ω(Max) ·100% avalanche te

AOT3N100/AOTF3N100 1000V,2.8A N-Channel MOSFET General Description Product Summary The AOT3N100 & AOTF3N100 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high level