डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
AOT12N30 | N-Channel MOSFET isc N-Channel MOSFET Transistor
AOT12N30
FEATURES ·Drain Current –ID= 11.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 300V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.42Ω(Max) ·100% avalanche |
INCHANGE |
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AOT12N30 | N-Channel MOSFET AOT12N30/AOTF12N30
300V,11.5A N-Channel MOSFET
General Description
Product Summary
The AOT12N30/AOTF12N30 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels o |
Alpha & Omega Semiconductors |
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