डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
AOI510 | 30V N-Channel MOSFET AOD510/AOI510
30V N-Channel AlphaMOS
General Description
• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halog |
Alpha & Omega Semiconductors |
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AOI510 | N-Channel MOSFET isc N-Channel MOSFET Transistor
AOI510
FEATURES ·Drain Current –ID= 70A@ TC=25℃ ·Drain Source Voltage-
: VDSS=30V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 3.6mΩ(Max) ·100% avalanche tested |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |