AOI468 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOI468 FEATURES ·Drain Current –ID= 11.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 300V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.42Ω(Max) ·100% avalanche te

AOD468/AOI468 300V,11.5A N-Channel MOSFET General Description Product Summary The AOD468 & AOI468 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of