AOI442 डाटा शीट PDF( Datasheet )

AOD442/AOI442 60V N-Channel MOSFET General Description Product Summary The AOD442/AOI442 used advanced trench technology to provide excellent RDS(ON) and low gate charge. Those devices are suitable for use a

isc N-Channel MOSFET Transistor AOI442 ·FEATURES ·Drain Current –ID= 37A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 20mΩ(Max) ·100% avalanche test