डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
AOI2610E | N-Channel MOSFET isc N-Channel MOSFET Transistor
AOI2610E
FEATURES ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage-
: VDSS=60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 9.5mΩ(Max) ·100% avalanche test |
INCHANGE |
|
AOI2610E | 60V N-Channel MOSFET AOD2610E/AOI2610E/AOY2610E
60V N-Channel AlphaSGT TM
General Description
• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Low Eoss • ESD protected • RoHS and Halogen-Free Comp |
Alpha & Omega Semiconductors |
www.DataSheet.in | 2017 | संपर्क |