AOI2610 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOI2610 FEATURES ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 10.7mΩ(Max) ·100% avalanche test

AOD2610/AOI2610 60V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID (at VGS=

isc N-Channel MOSFET Transistor AOI2610E FEATURES ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 9.5mΩ(Max) ·100% avalanche test

AOD2610E/AOI2610E/AOY2610E 60V N-Channel AlphaSGT TM General Description • Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • Low Eoss • ESD protected • RoHS and Halogen-Free Comp