डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
AOI11S60 | N-Channel MOSFET isc N-Channel MOSFET Transistor
AOI11S60
FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.399Ω(Max) ·100% avalanche t |
INCHANGE |
|
AOI11S60 | Power Transistor AOD11S60/AOI11S60
600V 11A α MOS TM Power Transistor
General Description
Product Summary
The AOD11S60 & AOI11S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deli |
Alpha & Omega Semiconductors |
www.DataSheet.in | 2017 | संपर्क |