डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
AOD538 | N-Channel MOSFET isc N-Channel MOSFET Transistor
AOD538
FEATURES ·Drain Current –ID= 70A@ TC=25℃ ·Drain Source Voltage-
: VDSS=30V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 3.1mΩ(Max) ·100% avalanche tested |
INCHANGE |
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AOD538 | 30V N-Channel MOSFET AOD538/AOI538
30V N-Channel αMOS™
General Description
• Trench Power AlphaMOS (αMOS™ LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant
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Alpha & Omega Semiconductors |
www.DataSheet.in | 2017 | संपर्क |