AOD4N60 डाटा शीट PDF( Datasheet )

AOD4N60/AOI4N60/AOU4N60 600V,4A N-Channel MOSFET General Description Product Summary The AOD4N60 & AOI4N60 & AOU4N60 have been fabricated using an advanced high voltage MOSFET process that is designed to del

Isc N-Channel MOSFET Transistor AOD4N60 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for r

isc N-Channel MOSFET Transistor AOD4N60 FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =2.3Ω(Max) ·100% avalanche tested