AOD425 डाटा शीट PDF( Datasheet )

isc P-Channel MOSFET Transistor AOD425 FEATURES ·Drain Current –ID= -50A@ TC=25℃ ·Drain Source Voltage- : VDSS= -30V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 17mΩ(Max) ·100% avalanche test

AOD425 P-Channel Enhancement Mode Field Effect Transistor General Description The AOD425 uses advanced trench technology to provide excellent RDS(ON) and ultra-low low gate charge with a 25V gate rating. This