AOB7S65 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOB7S65 FEATURES ·Drain Current –ID= 7.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.65Ω(Max) ·100% avalanche test

isc N-Channel MOSFET Transistor INCHANGE Semiconductor AOB7S65L ·FEATURES ·High speed switching ·Low gate input resistance ·Standard level gate drive ·100% avalanche tested ·Minimum Lot-to-Lot variation

AOT7S65L/AOB7S65L/AOTF7S65L/AOTF7S65 650V 7A α MOS TM Power Transistor General Description Product Summary The AOT7S65L & AOB7S65L & AOTF7S65L & AOTF7S65 have been fabricated using the advanced αMOSTM high