डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
AOB4S60 | 600V 4A MOS Power Transistor AOT4S60/AOB4S60/AOTF4S60
600V 4A α MOS TM Power Transistor
General Description
Product Summary
The AOT4S60 & AOB4S60 & AOTF4S60 have been fabricated using the advanced αMOSTM high voltage process that is d |
Alpha & Omega Semiconductors |
|
AOB4S60 | N-Channel MOSFET isc N-Channel MOSFET Transistor
AOB4S60
FEATURES ·Drain Current –ID=4A@ TC=25℃ ·Drain Source Voltage-
: VDSS=600V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 0.9Ω(Max) ·100% avalanche tested |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |