AOB482L डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOB482L FEATURES ·Drain Current –ID=105A@ TC=25℃ ·Drain Source Voltage- : VDSS=80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 6.9mΩ(Max) ·100% avalanche teste

AOT482L/AOB482L 80V N-Channel MOSFET SDMOS TM General Description Product Summary The AOT482L/AOB482L is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge and low