AOB470L डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOB470L FEATURES ·Drain Current –ID=100A@ TC=25℃ ·Drain Source Voltage- : VDSS=75V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 10.2mΩ(Max) ·100% avalanche test

AOT470/AOB470L 75V N-Channel MOSFET General Description Product Summary The AOT470/AOB470L uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitabl