AOB440 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOB440 ·FEATURES ·Drain Current –ID= 75A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.5mΩ(Max) ·100% avalanche tes

www.DataSheet4U.com AOB440 N-Channel Enhancement Mode Field Effect Transistor General Description The AOB440 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This