AOB416 डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOB416 ·FEATURES ·Drain Current –ID= 45A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 36mΩ(Max) ·100% avalanche tes

AOB416 100V N-Channel MOSFET SDMOS TM General Description Product Summary The AOB416 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstandin