AOB412L डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOB412L ·FEATURES ·Drain Current –ID= 60A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 15.5mΩ(Max) ·100% avalanche

AOT412/AOB412L 100V N-Channel MOSFET SDMOS TM General Description The AOT412 & AOB412L are fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge & low Qrr.The result is