AOB411L डाटा शीट PDF( Datasheet )

isc P-Channel MOSFET Transistor AOB411L ·FEATURES ·Drain Current –ID= -78A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 16.5mΩ(Max) ·100% avalanche

AOB411L 60V P-Channel MOSFET General Description The AOB411L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters