AOB409L डाटा शीट PDF( Datasheet )

AOB409L 60V P-Channel MOSFET General Description The AOB409L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for boost converters

isc P-Channel MOSFET Transistor AOB409L ·FEATURES ·Drain Current –ID= -31.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 38mΩ(Max) ·100% avalanche