AOB288L डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOB288L ·FEATURES ·Drain Current –ID= 46A@ TC=25℃ ·Drain Source Voltage- : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8.9mΩ(Max) ·100% avalanche te

AOT288L/AOB288L/AOTF288L 80V N-Channel MOSFET General Description The AOT288L & AOB288L & AOTF288L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switchin