AOB282L डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOB282L ·FEATURES ·Drain Current –ID= 105A@ TC=25℃ ·Drain Source Voltage- : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.2mΩ(Max) ·100% avalanche t

AOT282L/AOB282L 80V N-Channel MOSFET General Description The AOT282L & AOB282L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both