AOB262L डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOB262L ·FEATURES ·Drain Current –ID= 140A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.8mΩ(Max) ·100% avalanche t

AOT262L/AOB262L 60V N-Channel MOSFET General Description • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID (at VGS=