AOB256L डाटा शीट PDF( Datasheet )

isc N-Channel MOSFET Transistor AOB256L FEATURES ·Drain Current –ID= 19A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 85mΩ(Max) ·100% avalanche test

AOB256L 150V N-Channel MOSFET General Description The AOB256L uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and sw