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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
AO4406 | N CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR March 2002
AO4406 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4406 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltage |
Alpha Industries |
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AO4406 | N-Channel MOSFET Freescale
AO4406/MC4406
N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipatio |
Freescale |
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AO4406 | N-Channel MOSFET AO4406 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4406/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low a |
Alpha & Omega Semiconductors |
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AO4406A | N-Channel MOSFET AO4406A
30V N-Channel MOSFET
General Description
The AO4406A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general |
Alpha & Omega Semiconductors |
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AO4406A | N-Channel MOSFET AO4406A
30V N-Channel MOSFET
General Description
The AO4406A uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general |
Freescale |
|
AO4406AL | N-Channel MOSFET AO4406AL N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4406AL uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high s |
Alpha & Omega Semiconductors |
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