AO3409 डाटा शीट PDF( Datasheet )

www.DataSheet4U.com AO3409 P-Channel Enhancement Mode Field Effect Transistor General Description The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is sui

Plastic-Encapsulate Mosfets FEATURES The AO3409 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. D G

SMD Type P-Channel Enhancement Mode Field Effect Transistor AO3409 (KO3409) MOSFET Features VDS (V) = -30V ID = -2.6 A (VGS = -10V) RDS(ON) < 130m (VGS = -10V) RDS(ON) < 200m (VGS = -4.5V) +0.12.4 -0.1 SOT