AO3401 डाटा शीट PDF( Datasheet )

AO3401 30V P-Channel MOSFET General Description Product Summary The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This

FEATURES The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM appl

SMD Type P-Channel Enhancement MOSFET AO3401 (KO3401) MOSFET ■ Features ● VDS (V) =-30V ● ID =-4.2 A (VGS =-10V) ● RDS(ON) ＜ 50mΩ (VGS =-10V) ● RDS(ON) ＜ 65mΩ (VGS =-4.5V) ● RDS(ON) ＜ 120

30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, [email protected] < 64m Ω RDS(ON), [email protected], [email protected] < 75m Ω RDS(ON), [email protected], [email protected] < 120mΩ Features Advanced trench process technology

www.DataSheet4U.com AO3401A P-Channel Enhancement Mode Field Effect Transistor General Description The AO3401A uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation gate

AO3401, AO3401L (Lead-Free) P-Channel Enhancement Mode Field Effect Transistor General Description The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with ga