AO3400 डाटा शीट PDF( Datasheet )

AO3400 30V N-Channel MOSFET General Description Product Summary The AO3400 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable f

SMD Type MOSFIECT N-Channel Enhancement Mode Field Effect Transistor AO3400 (KO3400) Features VDS (V) = 30V ID = 5.8 A (VGS = 10V) RDS(ON) 28m (VGS = 10V) RDS(ON) 33m (VGS = 4.5V) RDS(ON) 52m (VGS = 2.5V) +

Plastic-Encapsulate Mosfets FEATURES The AO3400 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is e

30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, [email protected] < 28mΩ RDS(ON), [email protected], [email protected] < 33mΩ RDS(ON), [email protected], [email protected] < 52mΩ Features Advanced trench process technology High Dens

AO3400A 30V N-Channel MOSFET General Description Product Summary The AO3400A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is suitable