AM2305 डाटा शीट PDF( Datasheet )

AM2305 P-Channel Enhancement Mode MOSFET Features • -20V/-4A, RDS(ON)=40mΩ (typ.) @ VGS=-4.5V RDS(ON)=55mΩ (typ.) @ VGS=-2.5V Pin Description Top View D • • • Super High Dense Cell Design Relia

AiT Semiconductor Inc. www.ait-ic.com MOSFET -30V P-CHANNEL ENHANCEMENT MODE AM2305 DESCRIPTION The AM2305 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell de

Analog Power P-Channel 20-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical ap

Analog Power P-Channel 20-V (D-S) MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • White LED boost converters • Automotive Sy